to-92 plastic-encapsulated trans istors 2sC1008 transistor (npn) features power dissipation p cm : 0.8 w (tamb=25 ) collector current i cm : 0.7 a collector-base voltage v (br)cbo : 80 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100 a , i e =0 80 v collector-emitter breakdown voltage v(br) ceo i c = 10ma , i b =0 60 v emitter-base breakdown voltage v(br) ebo i e = 10 a, i c =0 8 v collector cut-off current i cbo v cb =60 v , i e =0 0.1 a emitter cut-off current i ebo v eb = 5 v , i c =0 0.1 a dc current gain h fe v ce = 2 v, i c =50ma 40 400 collector-emitter saturation voltage v ce(sat) i c = 500ma, i b =50 ma 0.4 v base-emitter saturation voltage v be(sat) i c =500ma, i b =50ma 1.1 v transition frequency f t v ce =10v, i c = 50ma 30 mhz classification of h fe rank r o y g range 40-80 70-140 120-240 200-400 1 2 3 to-92 1. emitter 2. base 3. collector transys electronics li m ite d
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